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Inversion Van Der Pauw Structure for Direct Surface Mobility Measure-Ment Disclosure Number: IPCOM000038380D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Jan-31

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El-Kareh, B Gravenites, GG [+details]


A relatively easy measurement technique, independent of device dimensions and resistance outside the channel region, is reported using a novel semiconductor field-effect structure that allows direct measurement of surface mobility as a function of surface field. The structure used may be defined as an inversion Van der Pauw resistor, as shown in the figure. It consists of five terminals, i.e., two voltage sensing and two current forcing tabs centered preferably on the sides of a square-shaped metal-insulator-silicon (MIS) structure, and a gate electrode. When an appropriate gate voltage overdrive (VG - VT) is applied, an inversion layer of known carrier concentration is formed under the gate.