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Diffusion Defined Bridge Contact Disclosure Number: IPCOM000038391D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Jan-31

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Kenney, DM [+details]


An electrical connection is formed over a narrow vertical insulator disposed between a first conductive, highly doped (p+) silicon region and a second conductive region during integrated circuit construction. The method of interconnection is self-aligned, i.e., requires no photo masking step. In the figure, a highly doped (p+) polycrystalline silicon region 2 is electrically connected to a conductive region 4 by means of conductive bridge 6 disposed over a narrow vertical insulator 8. Region 10 is a silicon substrate. The conductive bridge 6 is formed by depositing a thin polycrystalline silicon film on the entire surface and thermally driving p+ dopant from region 2 into film 6, across separator 8, and over region 4 (as indicated by shading in film 6).