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HIGHER SILANE ION IMPLANTATION INTO GaAs

IP.com Disclosure Number: IPCOM000038428D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Hovel, HJ Mitchell, JW [+details]

Abstract

Shallow implantation and preferred dopant species advantages are achieved by using higher silanes as a high mass implantation species. Advantages are gained by implanting with disilane (Si2H6), trisilane (Si3H8), or tetrasilane (Si4H10). Disilane is the most convenient as it is a gas at room temperature with a mass of 62. Trisilane is a liquid at room temperature, but since the boiling point is 53ŒC, the vapor pressure at room temperature is sufficient forimplantation. A slight heating of the lines can be used to obtain sufficient pressure. The mass of trisilane is 92. These materials are non-corrosive and convert to silicon oxide upon exposure to air. They are rendered non-explosive by dilution in argon to a mixture of 2% or less.