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Bipolar Transistor With Built-In Barrier Diode Disclosure Number: IPCOM000038466D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Jan-31

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Ning, TH [+details]


This article relates generally to integrated circuit fabrication and, more particularly, to the construction of a buried collector-base clamp to prevent transistor saturation. The provision of a buried collector-base diode clamp, while preventing transistor saturation, does not require wafer surface area or block wiring channels. Construction steps of a bipolar transistor with buried Schottky barrier diode are shown in the figures. In Fig. 1, a p- substrate 1 having an n+ subcollector layer 2 with n epitaxial layer 3 has isolation trenches 4 and recessed field oxide 5 formed therein.