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Redundancy Scheme Disclosure Number: IPCOM000038635D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Jan-31

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Loehlein, WD Tong, M [+details]


A redundancy scheme and a new circuit design are described which comprise an enhanced yield memory with no loss of access time. The figure shows in particular a new address true-complement (T/C) switch which provides the memory with a distinctive feature so that a thin-oxide capacitance during the normal operation of the memory passes unnoticed by the address inputs. There is no extra fuse, and thus no increase in DC power and time resulting from fuse blowing. If the chip is an all-good one, no redundant word or bit line WL or BL is required. Hence, there is no need to blow a fuse. Node C remains high to keep signal DSEL from staying low when signal ASW is activated. Transistors T17 and T18 are kept off by nodes E and F, so that address input A1C is isolated from the thin-oxide capacitance.