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Noise-Tolerant Select Scheme for a Semiconductor Memory

IP.com Disclosure Number: IPCOM000038637D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Jan-31

Publishing Venue

IBM

Related People

Authors:
Gepraegs, W Loehlein, WD Talmon-Gros, W Tong, M [+details]

Abstract

A circuit is described which prevents undesired noise spikes from selecting a memory array without the disadvantage of having to desensitize the input stages of the array, which would lead to considerable delays in access time. This is avoided by the present circuit which comprises at its input a fast inverter T1/T2, whose threshold is very close to its unselected state. As a result, the inverter responds at a very early stage, causing single-shot output C to be pulled to ground. The circuit output thus remains at its upper voltage level. At the end of the short pulse time of the single-shot, node C of the latter is raised to voltage VH, while the output of the illustrated circuit remains in the unselected state, as the noise spike has since disappeared and gate T12/T8 is grounded.