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Temperature-Compensated Isolated Buried Reference Zener Diode

IP.com Disclosure Number: IPCOM000038798D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Ward, WA [+details]

Abstract

A device structure is described which adds temperature stability to a noise-immune, on-chip reference voltage device, e.g., the one described in the IBMM Technical Disclosure Bulletin , 27, 1782-3 (August 1984). This temperature stability is achieved by adding back-to-back diodes which have equal and opposite temperature coefficients within the device structure . Fig. 1 shows the new structure which is similar to much of the structure of the reference. This new structure is comprised of an N-type epitaxial silicon (EPI) 2 grown on P-type substrate silicon 4, with top and bottom isolation P+regions 6, a P base region 8, with an N+ contact 10 to a P+ diffusion 12, above a buried N+ sub-collector 14. An N+ reach-through diffusion 16 makes contact to the sub-collector 14.