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Contactless Electrical Equivalent Oxide Thickness Measurement

IP.com Disclosure Number: IPCOM000038945D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Curtis, HW Fung, MS Verkuil, RL [+details]

Abstract

Proposed is a contactless electrical method of determining equivalent oxide thickness on semiconductor wafers. The method would replace the cumbersome and time-consuming optical approach, thereby improve productivity. In manufacturing semiconductor wafers the oxide thickness must be measured in order to measure the oxide charge of the wafers. In most instances optical equipment is used to estimate the equivalent electrical thickness of single and multilayer dielectrics. The proposal provides for a direct contactless electrical thickness measurement of dielectrics.