Browse Prior Art Database

Solid-State Memory

IP.com Disclosure Number: IPCOM000039022D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Guidotti, D Hovel, HJ [+details]

Abstract

Non-radiative recombination centers in GaAs can store energy that is written by energy beams and sensed by optical means. III-V compounds, such as GaAs, luminesce when illuminated with energy beams, such as an electron beam or laser beam. The incident energy beam creates electron-hole pairs which recombine in part radiatively giving rise to light output at photon energies slightly below the band gap of the semiconductor. The emitted light can be easily (Image Omitted) detected using photodetectors of several types, i.e., Si photodiodes, S-I cathodes, etc. In III-V compounds, such as GaAs, a time degradation of the emitted photoluminescence takes place due to the incident energy beam, leading to dark spots wherever the incident beam has been allowed to dwell for some period of time.