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In Situ Determination of Growth Rate and Stoichiometry in a Heterogeneous CVD Reactor

IP.com Disclosure Number: IPCOM000039040D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Bartha, J Greschner, J Kraus, G [+details]

Abstract

The growth rate of layers in a heterogeneous chemical vapor deposition (CVD) reactor is determined from the concentration decrease of reactants in the outlet gas as measured in a mass spectrometer. In a heterogeneous CVD reaction, layers are deposited only on selected surfaces of known size; if, for instance, an Si-layer is to be grown on wafers by pyrolysis of silane (SiH4/gas T Si/solid + 2H2/gas), the silane can be supplied to the reactor along with a large quantity of He as a carrier gas which is not affected by the reaction.