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Silicon-Charged RIE Electrode

IP.com Disclosure Number: IPCOM000039129D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
McGouey, RP [+details]

Abstract

This publication describes a relatively inexpensive electrode used for the uniform reactive ion etching (RIE) of polymers using silicon-bearing etch barriers. Active fluoride ion is frequently used, alone or in combination with oxygen, when reactive ion etching silicon, silicon compounds, or polymers protected by siliceous masks. In order to provide the chemical equilibrium and, therefore, etch uniformity spatially across a large area electrode, RIE processors have constructed their driven electrodes from polycrystalline silicon. These electrodes are costly. A suitable replacement providing the same reaction uniformity in the plasma and costing far less has been tested. The body of the electrode is fabricated from materials, such as aluminum or pyrolytic graphite.