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Organosilane RIE Barrier

IP.com Disclosure Number: IPCOM000039168D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Agostino, PA [+details]

Abstract

This article concerns a new reactive ion etch (RIE) barrier material, a spinnable organosilane compound offering a negligible RIE rate in oxygen, yet easily removable by exposure to CF4 plasma. In present thin film technology practice, patterns are generated by the transfer of lithographic patterns to a lift-off stencil composed of alternating layers of materials that are either susceptible or not to oxygen RIE. Non-susceptible layers are referred to as RIE barriers and, under present processing, are made by the use of a plasma reaction in special CVD (chemical vapor deposition) plasma deposition tools. This procedure requires the use of expensive processing equipment to ensure uniformly deposited films (layers).