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Vlsi Technologies Retrograded Source/Drain Junctions

IP.com Disclosure Number: IPCOM000039229D
Original Publication Date: 1987-May-01
Included in the Prior Art Database: 2005-Feb-01

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Troutman, RR [+details]


Retrograded source/drain junctions reduce hot carrier reliability effects and field-effect transistor (FET) series spreading resistance. A high lateral electric field is associated with the conventional FET drain diffusion, especially arsenic diffusions which cause hot carrier effects. The utilization of graded junctions, such as lightly doped drains (LDDs) and lightly implanted silicided drains, as solutions to this problem result in degraded performance due to increased series resistance. This series resistance, caused by spreading resistance from the channel region to drain contact, is increased by shorter channels, thinner oxides and shallow junctions.