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Sidewall Contact Transistor Structure and Process

IP.com Disclosure Number: IPCOM000039469D
Original Publication Date: 1987-Jun-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Monkowski, MD [+details]

Abstract

This article concerns the use of a sidewall contact to make a symmetrical bipolar transistor structure. Existing processes to this end fill the side contact area with polysilicon and require a planarization operation to remove the excess on the surface. The disclosed process uses an RIE (reactive ion etch)-produced sidewall to make contact to the base region of the transistor thereby eliminating the need for planarization. Symmetrical bipolar transistor structures employing sidewall contacts have been described in [1,2]. The main feature of the present process involves the use of the sidewall rail described in [3] to make the sidewall contact. Fig. 1 shows a top view of the transistor structure formed by use of references [1 through 4].