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High Efficiency Thermal Atomic Source

IP.com Disclosure Number: IPCOM000039549D
Original Publication Date: 1987-Jun-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Demuth, JE Ledermann, P [+details]

Abstract

A high efficiency thermal atomic (HETA) source is described which is an inexpensive, clean and efficient means for generating high flux rates of thermal atomic species in a high vacuum or ultra-high vacuum environment. It can be used for defect passivation, doping or compound formation during conventional or new low temperature VLSI processing of Si. More importantly, it can be utilized for these same functions in situ during the growth processes used in molecular beam epitaxy (MBE). For MBE processing this seeding of atomic species in situ can allow the tailoring of device characteristics on a layer-by-layer basis during growth, and provides for passivation or doping, as well as the formation of new compound layers (i.e., in situ oxidation or nitridation for isolation or as a diffusion barrier layer.