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Polysilicon-Based Temperature Sensor

IP.com Disclosure Number: IPCOM000039579D
Original Publication Date: 1987-Jul-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Cressler, JD [+details]

Abstract

A technique is described whereby two different polysilicon-based resistors, that are compatible with standard bipolar manufacturing processes, provide characteristics to form a unique polysilicon-based temperature sensor. The resistors are two types of n0+ polysilicon resistors, fabricated in the same type of process as are transistors, to produce resistors having separate and distinct temperature vs. resistance characteristics. Fig. 1 shows the temperature vs. resistance curves for a diffused poly resistor labeled R1 and for a poly-on-oxide resistor labeled R2. R1 shows an increasing resistivity with temperature, while R2 shows a decreasing resistivity with increasing temperature. (Image Omitted) When the resistors are used in an electrical circuit, such as the differential circuit shown in Fig.