Browse Prior Art Database

RIE Planarization Process

IP.com Disclosure Number: IPCOM000039589D
Original Publication Date: 1987-Jul-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Marinaccio, FA Massaro, P Orner, CH [+details]

Abstract

This article concerns the development of an RIE (reactive ion etch) technique for planarizing semiconductor device wafers in order to alleviate adverse yield and reliability problems associated with non-planar surfaces. ROI (recessed oxide isolation) structures are often used to isolate semiconductor device structures. A raised, non-planar region commonly referred to as the 'bird's head', is a source of yield and reliability concerns. This non-planar region is often a stressed region in overlaying films, such as oxide, nitride, polysilicon and metal layers, its defects contributing to shorts and leakage paths in underlaying doped polysilicon structures where metal rails overlay the 'bird's head'.