Browse Prior Art Database

Quartz Dielectric Cathode Ring Improves Etch Rate

IP.com Disclosure Number: IPCOM000039591D
Original Publication Date: 1987-Jul-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Seirmarco, JA Whitman, WC [+details]

Abstract

A modification of the material composition of the cathode ring in an etch tool has resulted in an improved etch rate with better uniformity in dry etching of semiconductor wafers. A plasma etch system is used for photoresist (PR) strip of semiconductor wafers and descum, partial photoresist removal, in semiconductor processing. The specific tool being used is a single wafer, cassette-to-cassette etching tool using O2 and radio frequency (RF) plasma. The original system had the lower electrode (cathode) configuration indicated by Fig. 1. The silicon wafer 1 being processed (Image Omitted) rested on the lower RF-powered electrode 2. A pin plate 3 with vertical motion and equipped with lift pins 4 raised the wafer into the plasma chamber 8 or lowered it back into the recess of the electrode.