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Method for Controlling the Characteristics of Semiconductors

IP.com Disclosure Number: IPCOM000039613D
Original Publication Date: 1987-Jul-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Batra, IP Ciraci, S [+details]

Abstract

In the manufacture of semiconductor devices, it is highly desirable to be able to control the electronic properties of the semiconductor, in particular, its conductivity, at will. A method to do this is by metal deposition on the semiconductor surface. For example, potassium atoms are adsorbed on a Si (111)-(2x1) surface strongly and ionically. Up to a threshold coverage, the potassium electrons are donated to the empty f*-band, resulting in a 1-D metallic system. Above the threshold, the Fermi level crosses the bulk conduction-band minimum, and the potassium electrons are transferred into the lowest bulk conduction-band and thus become itinerant, leading to a metallization of the semiconductor surface.