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SOLID PHASE REGROWTH OF AMORPHOUS DEPOSITED LAYERS ON PREAMORPHIZED SUBSTRATES

IP.com Disclosure Number: IPCOM000039680D
Original Publication Date: 1987-Jul-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Iyer, SS Michel, AE [+details]

Abstract

Solid phase epitaxial regrowth of films offers the possibility of attaining sharp doping profiles in films for various device applications. As shown in [*], one can grow amorphous films in UHV and, simultaneously, incorporate dopant atoms in any desired profile and subsequently regrow the amorphous film epitaxially with minimal alteration of the doping profile, at temperatures of about 600oC. Experience shows that this process has a very narrow process window. The hazard is that if the film is thick or if for some reason (impurity incorporation, improper substrate preparation, etc.) regrowth is slow, nucleation of crystallites which is not in phase may also take place.