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Submicron Gap-Fill Process for Electronic Structures

IP.com Disclosure Number: IPCOM000039828D
Original Publication Date: 1987-Aug-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Finch, WF Kelly, JE Schneider, DW [+details]

Abstract

This process enables filling submicron gaps in semiconductor integrated structures with high molecular weight polyimides. Fabrication of the metallization and insulation layers of single and multilevel metallization on semiconductor integrated circuits is done with the following generalized process sequence: 1) the insulating film is deposited; 2) appropriate channels are etched in the film by the usual methods; 3) metal is deposited in the channels through a liftoff (or other) mask; and 4) steps 1 through 3 are repeated for multilevel structures. Fabrication of such microstructures using polyimide as the insulating film material has the problem that a gap is formed between the etched walls of the insulator channel and the metal deposited in the channel.