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Photoresist-Adhesion Improvement on Polished Quartz Surface

IP.com Disclosure Number: IPCOM000039838D
Original Publication Date: 1987-Aug-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Bhattacharya, S Brooks, GA Greco, NA [+details]

Abstract

A method has been proposed to avoid the poor adhesion which lift-off resist structures exhibit to some surfaces in the processing of semiconductor devices. The proposal suggests the deposition of a thin nitride on the polished surface to which resist will adhere well. Photoresist (PR) adhesion to some surfaces is a problem in advanced lithography with small line/space maze regions. Various adhesion promoters and process modifications have not proven as effective as desired. The proposed method would be applied to an L/K structure 1 (Fig. 1) with composite insulator nitride 2 and sputtered quartz de position 3 having a surface 4. A thin layer of plasma-enhanced chemical vapor deposition (PECVD) nitride 5 (Fig. 2) is deposited on the surface 4 to provide adhesion to the PR 6 next laid down.