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Epitaxial 3d Structure Using Mixed Spinels

IP.com Disclosure Number: IPCOM000039882D
Original Publication Date: 1987-Aug-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Rosenberg, R [+details]

Abstract

Mixed spinels, for instance, a ternary spinel, can be deposited on a silicon substrate and serve as a suitable substrate for the epitaxial growth of another top layer thereon. The top layer can be silicon or another semiconductor, such as GaAs. Each of the silicon layers (or the top GaAs layer) can have active devices in the layer. Examples of mixed spinels that can serve as suitable substrates for epitaxial growth include iron magnesium aluminate FeO$MgO$Al2O3 and magnesium aluminum gallate MgO$Al2O3$Ga2O3 . In the former, the amounts of FeO and MgO can be changed to alter the lattice parameter, while in the latter spinels the relative amounts of Al2O3 and Ga2O3 can be changed in order to change the lattice constant of the spinel.