Improved Continuous Chrome Process
Original Publication Date: 1987-Aug-01
Included in the Prior Art Database: 2005-Feb-01
This article concerns an enhanced process for removing unwanted parts of platinum and chrome barrier films previously deposited to prevent conductive metals, such as aluminum, from penetrating a silicon surface in the "contact region" of a semiconductor device structure. Barrier films, such as platinum and/or chromium, have been found to protect semiconductor device structure "contact regions" from unwanted penetration by conductive metals, such as aluminum or copper. Such penetration, particularly at the perimeter of a silicon-nitride- defined "contact region", has been identified as a significant cause of failure and must be prevented. The disclosed technique involves an improvement in existing processes for removing unwanted parts of these platinum and chrome films. Figs.