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Alignment of Buried Structures in Semiconductor on Insulator Technology

IP.com Disclosure Number: IPCOM000039944D
Original Publication Date: 1987-Aug-01
Included in the Prior Art Database: 2005-Feb-01

Publishing Venue

IBM

Related People

Authors:
Kern, DP Sai-Halasz, GA [+details]

Abstract

Semiconductor on insulator (SOI), for instance, Si on oxide, is a useful technology for a wide variety of applications. One technique to create Si on oxide is the so called Q-bonding approach. Here, oxidized Si wafers are brought into contact and fused together. One of the wafers is subsequently thinned down to form the Si on the oxide layer, while the other serves as the substrate. One extension of the basic approach is the possibility to have some structures already built into one, or possibly both, of the wafers to be joined. This article relates to a technique for providing alignment for the device structures already present in one of the wafers, with the structures to be built on the other.