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Spin-Polarized Tunneling Storage Device Disclosure Number: IPCOM000040129D
Original Publication Date: 1987-Sep-01
Included in the Prior Art Database: 2005-Feb-01

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Reihl, B [+details]


Increasing demand for storage devices with higher packing densities requires the use of smaller domain structures than employed in the Winchester and bubble-domain-type memories. A lateral resolution in the 0.1 nanometer range permitting to obtain information on the magnetic domains as well as on the domain walls, i.e., on the changes of magnetization in real space, is achieved with a technique which benefits from the characteristics of the scanning tunneling micorscope (STM). Two tunneling tips, one operated in the conventional STM mode and the other in the spin polarized mode, are scanned in parallel across the record medium. The conventional tip is regulated via feedback on a constant tunneling current.