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Ion Getter Trap for Water Vapor

IP.com Disclosure Number: IPCOM000040184D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Bauer, HJ [+details]

Abstract

A method has been developed for removing water vapor from thin film deposition chambers by bombarding it off the chamber walls and causing it to react with a getter electrode. The sputtering effect of an Ar plasma is used to simultaneously strip the surface of the electrode. (Image Omitted) In semiconductor processing the presence of water vapor in the deposition chamber 1 (Fig. 1) during sputter cleaning gives rise to high contact resistance at via interfaces of the wafer 3 upon deposition of interconnection metallurgy. To overcome this problem, a getter electrode 2 is installed inside the vacuum chamber at a distance of 15-20 mm from the chamber walls. The electrode is electrically insulated from the chamber walls and consists of a metal which chemically reacts with water vapor and O2 .