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Storage Device Using Ferroelectric Films and a Scannable Tip Disclosure Number: IPCOM000040249D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-02

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McClelland, GM [+details]


This article describes a direct-access storage device (DASD) and method using scanning tunneling microscopy (STM) technology. To write binary indicia, the localized electric field from a sharp scannable conductive tip is used to polarize a ferroelectric film in either of two directions. To read the indicia, the tip is scanned just over the surface of the dielectric, and the image charge brought to the tip surface is measured. As illustrated, tip 1 is spaced about 50 nm from a ferroelectric film 2 which is about 50 nm thick and supported on a conductive substrate 3. Tip 1 constitutes a read-write head. To write binary indicia, voltage driver 4 brings tip 1 positive or negative with respect to conductive substrate 3, thereby writing a "1" or "0".