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Structure for Determining the Lateral Diffusivity of Mobile Ions in Dual Dielectric Materials

IP.com Disclosure Number: IPCOM000040311D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Mann, RW [+details]

Abstract

A structure and method for determining the lateral diffusivity of mobile ions in a dual dielectric structure is described. The structure enables Capacitance-Voltage (C-V) measurements which can be used to calculate the ion diffusivity in a corresponding dual dielectric. As shown in Fig. 1, the structure consists of a layer of dielectric 10 such as silicon nitride (Si3N4) on top of an oxide layer 12 which has been grown or deposited on a silicon semiconductor surface 14. A cut 16 in the dielectric is made parallel to several metal lines l1, l2,...lx ...lk which are of length L, and are of a width W and spacing S, as shown in Fig. 2. An aqueous solution of the mobile ion of interest is introduced into the dielectric cut 16 (Fig. 1).