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Scheme for Proximity Correcting Repetitive Design Features Disclosure Number: IPCOM000040341D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-02

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Rudert, JR [+details]


This data compaction method for an electron beam system provides proximity correction changes as part of the referencing data. With this method, a greater volume of the chip pattern description can still be compacted for all cases. In semiconductor processing, data volume to describe chips is becoming large and difficult to manage. One method for data reduction uses the approach that repeating cells need be specified only once. They are then simply referred to, or called, each time they are used in an integrated circuit design. In such cases, both the dose and the geometry must be identical. However, this compaction scheme has limitations in that it cannot be used if proximity corrections are used. This is because the dose will be different in general for each placement of a book or macro.