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Enhanced Metal-Silicide Formation by Low Energy Bombardment

IP.com Disclosure Number: IPCOM000040487D
Original Publication Date: 1987-Nov-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Cuomo, JJ Mikalsen, DJ [+details]

Abstract

A technique is described whereby the formation of thinner and more uniform metal silicides are produced so as to be able to reduce the size of silicon devices, as used in VLSI structures. The concept provides a process of lowering the time-temperature required to form three silicides from thin films of metal deposited on silicon substrates by means of pretreatment of the silicon substrates and/or concurrent bombardment of the depositing film with low energy ion beams. The use of metal silicides as an intermediate layer between contact metallurgy and the device silicon is readily recognized in VLSI structures. Silicides are normally formed by depositing a metal layer and annealing the device at an elevated temperature in order to enable the metal to react with the silicon for the silicide formation.