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Light Emitting Device Disclosure Number: IPCOM000040538D
Original Publication Date: 1987-Nov-01
Included in the Prior Art Database: 2005-Feb-02

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Epperlein, PW [+details]


The main element of a light-emitting device is a simple metal gate/ semiconductor Schottky contact configuration. Use is made of metal/ semiconductor interface states: Induced inversion layers are the source of minority carriers which, upon the application of control signals to the metal gate, drift away from the interface and recombine radiatively. Fig. 1 shows the configuration of the device. A n-GaAs semiconductor and a metal gate form a Schottky contact. In the n-type GaAs, a hole trap (minority carriers) is formed having its maximum concentration near the gate/semiconductor interface. It extends to about 30 nm (Image Omitted) into the semiconductor material. The interface states create an inversion layer due to the accumulation of holes (minority carriers) in the n-doped semiconductor material.