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New Transistor and Schottky Diode Chain Test Structure Disclosure Number: IPCOM000040607D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

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Magdo, S Scheffer, CW [+details]


This is a method of forward biasing in test site chain structures of semiconductor devices. By forward biasing, it is possible to function without wiring the separate collector contacts. This improves the design density of the system. Transistors and Schottky barrier diode (SBD) chains are used to monitor masterslice defects such as emitter-to-collector shorts or leakages, base-to-collector shorts or leakages, and Schottky diode shorts and leakages. In the figure the chains 1 are wired in parallel 2. It is not possible to separate metal shorts between these parallel wires from masterslice defects. A short between the emitter and collector wire, for instance, shows up as a pipe. Here a new chain structure eliminates the metal short interference.