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Use of a Low Temperature Silicon Deposit Over Heavily Doped Subcollectors Preventing Autodoping of Epitaxial Overlayers Disclosure Number: IPCOM000040639D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

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Acker, CP [+details]


As shown in Fig. 1, an epitaxial silicon layer 10 deposited over a heavily doped region 12 (such as a subcollector) may suffer from autodoping (see arrows) during deposition. As shown in Fig. 2, growing a layer of chemical vapor deposited (CVD) silicon 14 over the heavily doped region 12 prior to stripping the ion implant masking layers 16 and 18 allows the epitaxial silicon layer 20 to be grown over the heavily doped region 12 without autodoping of the epitaxial layer 20 (see Fig. 3).