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Infrared-Activated Selective Etching of P+ Silicon for Failure Analysis

IP.com Disclosure Number: IPCOM000040644D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Charles, JS [+details]

Abstract

A reliable failure analysis technique is reported that combines infrared (IR) radiation with a silicon wet etch to delineate P+/Nboundaries for ion-implanted or diffusion dopant concentration related defects. Because of small size, turn-around time and complex processing conditions, visual inspection of DRAMs and dense logic chips requires appropriate physical diagnostic tools and techniques for fast detection of problems. An IR/wet etch technique, which can replace the silicon "dash etch" failure analysis method, affords better control when applied to 12 ohm-cm [100] P substrate wafers.