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High Density Cross Point Semiconductor Memory Cell

IP.com Disclosure Number: IPCOM000040651D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Scheuerlein, RE [+details]

Abstract

A high density cross point semiconductor cell which provides a large output signal for a small memory cell surface area is fabricated so as to maximize the signal storage capacity while minimizing the parasitic capacity. The figure shows a cross section of a high density cross point semiconductor memory cell featuring a buried signal storage trench 10 with a large circumference in order to maximize the trench storage node capacity Cs for maximum signal output. The structure has features at the wafer surface which occupy a much smaller area than the buried trench feature allowing closer cell-to-cell design spacing. A collar hole 11 from the top of the buried trench 10 to the wafer surface houses the cell's gate which is in contact with word line 12.