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High Conductivity Multiphase Metal-Silicide Alloy

IP.com Disclosure Number: IPCOM000040660D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Joshi, RV [+details]

Abstract

A technique is described whereby the conductivity of silicide structures, as used in the metal oxide silicon (MOS) semiconductors, is enhanced through the use of an alloyed salicide process. Through the use of selective thin metal deposition and annealing techniques, the resistivity of the silicides is lowered. Also, an improvement in the thermal stability and oxidation resistance of the metals or silicides used to form the semiconductor is attained. Silicides of refractory metals, such as titanium, cobalt and nickel, are used in submicron MOSFET salicide technology due to their low resistivities. However, silicides, such as cobalt and nickel, present thermal stability and bridging problems. The concept described herein provides a process to improve the thermal stability and reduce bridging problems.