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Simultaneous Punch-Through Stop and Channel Stop Implants Disclosure Number: IPCOM000040781D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Feb-02

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Related People

El-Kareh, B Gravenites, GG Puttlitz, AF [+details]


By appropriate selection of ion implantation energy and dose, a single photomask and a single ion implantation is used to create a boron doped punch-through stop under n-type device channels and to supply boron doping under recessed oxide regions to provide field tailoring for channel stop regions.