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III-V Compound Semiconductor Capping Layer Deposition

IP.com Disclosure Number: IPCOM000040811D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Hovel, HJ [+details]

Abstract

Layers of TiO2, TaxOy, TiN or TaN can be deposited by pyrolysis of metal-organic compounds in O2, O2 + H2O, or NH3 containing atmospheres at temperatures less than 250oC. Combinations of layers can be obtained by appropriate change of atmosphere. The capped semiconductor material may then be removed for further annealing at a later time or it can be annealed at once by raising the temperature in the same system. A further advantage can be gained by selectively removing the low-temperature cap material using photolithographic techniques and using the cap material left behind as an implantation mask. This may be followed by reloading for further cap deposition, if desired, and further subsequent annealing. Materials such as TiO2 deposited from Ti(OC3H7)4 can be grown at temperatures of 100oC and are easily etched in HF.