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In-Situ Method of Checking Strain of Wafers

IP.com Disclosure Number: IPCOM000040812D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Ahn, KY Angilello, J [+details]

Abstract

In thin film technology, it is desirable to be able to take data on a wafer while in a vacuum, in order to check wafer strain and to check the uniformity of thin films being deposited on the wafer. In the technique of this article, a scanning light beam is used.