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Hydrogen Sputtering Treatment for Polyimide

IP.com Disclosure Number: IPCOM000040819D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Bartha, JW Ho, PS [+details]

Abstract

Dry processing is used for manufacturing of multilayered structures for packaging and device applications. One of the key elements in dry processing is ion beam sputtering. Using an Argon ion beam of about lkeV, interconnect patterns, e.g. via and stud openings, can be etched into a polyimide layer to form part of a multilayered structure. One of the problems in such a process is the formation of a semiconducting surface layer caused by residual carbon accumulation during the decomposition of polyimide. This carbon layer provides a semi-conducting path for current leakage between isolated interconnections and should be eliminated.