Browse Prior Art Database

A Self-Aligned Process for Advanced Bipolar Transistor with Improved Intrinsic Base Silicon Surface

IP.com Disclosure Number: IPCOM000040842D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Tsang, YL [+details]

Abstract

Disclosed is a process for protecting the active emitter area of an advanced bipolar transistor structure from localized punch- through failures due to surface irregularities in the underlying extrinsic base polysilicon.