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A Self-Aligned Process for Advanced Bipolar Transistor with Improved Intrinsic Base Silicon Surface Disclosure Number: IPCOM000040842D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Feb-02

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Tsang, YL [+details]


Disclosed is a process for protecting the active emitter area of an advanced bipolar transistor structure from localized punch- through failures due to surface irregularities in the underlying extrinsic base polysilicon.