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Process and Mask Structure for Submicrometer-Wide Polysilicon or Polycide Emitters

IP.com Disclosure Number: IPCOM000040868D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Feb-02

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Lechaton, JS Shepard, JF Tien, ZJ Tsang, PJ [+details]


A method has been proposed to make very narrow emitters required for high performance bipolar transistors. This article suggests merging processing techniques for the polycide emitter transistor and sidewall image transfer to achieve the desired structure.