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Oxygen rich alumina can be chemically etched in a solution wit a higher concentration of phosphoric acid than that used for oxyge poor alumina.
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Chemical Etching of Alumina
Oxygen rich alumina can be chemically etched in a solution wit a higher
concentration of phosphoric acid than that used for oxyge poor alumina.
The sputter deposition of alumina can result in the random production of
oxygen rich and oxygen deficient alumina deposits. Oxygen rich alumina has an
apparent chemical inertness to phosphor acid etching.
The oxygen rich alumina can be chemically etched in a more concentrated
phosphoric acid bath apparently because of the result of a partial proton transfer
reaction. The more concentrat solution provides the necessary amount of
phosphate that is required to compensate for the high oxygen content of the
alumina. The electronegativity of the metal-oxygen bond is thus lowered by the
solution. This reduces the potential of the activation energy required for the
dissociation of the oxygen rich alumina to form alumina phosphate and thereby