Browse Prior Art Database

Trench Cap Formation

IP.com Disclosure Number: IPCOM000040879D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Arienzo, M Mauer, JL [+details]

Abstract

Silicon-filled trenches for bipolar device isolation can be mo reliably and simply capped beneath crossing metal conductors by forming the cap with tetraethoxysilane (TEOS) oxide.