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Photoresist hardening enables more efficient construction of multi-level metal structures using the polyimide planar process by filling gaps and serving as a dielectric and etch stop.
English (United States)
This text was extracted from a PDF file.
This is the abbreviated version, containing approximately
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Dual-Dielectric Fabrication Method
Photoresist hardening enables more efficient construction of multi-level metal
structures using the polyimide planar process by filling gaps and serving as a
dielectric and etch stop.
In Fig. 1, metal line 1 with stud 2 on substrate 3 are fabricated in the usual
manner with polyimide dielectric 4 added in successive layers. This process
leaves gap 5 surrounding stud 2. The last polyimide layer is left below the top of
stud 2 by an amount equal to the thickness of a low viscosity photoresist layer 6
that is next spun on the module and fills gap 5. The photoresist layer is then
exposed and developed in a pattern complementary to the stud pattern, leaving a
planar surface with a thin, narrow open channel 7 about the stud top, as in Fig. 2.
Photoresist dosage and development conditions are selected to leave the
photoresist in gap 5 unexposed.
The remaining unexposed photoresist is then hardened to form a thermally
stable, dual dielectric layer having low moisture uptake that passivates the metal
and polyimide surfaces from water absorption. Hardening is done under
conditions to insure that the photoresist in gap 5 is completely hardened.
Thereafter, succeeding polyimide 8 and metal layers 9 are added, as in Fig. 3,
and the foregoing sequence repeated. The treated photoresist acts as an
oxygen etch stop and also serves to fill defects in the underlying polyimide.
As an alternative to photoresist, a photosensitive Si-containing polyim...