Browse Prior Art Database

A Chlorinated RIE Process with High Si3N4:SiO2 Etch Selectivity

IP.com Disclosure Number: IPCOM000040960D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Arroyo, MA Stanasolovich, D [+details]

Abstract

The process described below allows for high etch selectivity of silicon nitride with the respect to silicon dioxide. This is important in the definition of nitride spacers and other processing steps. Step 1 - Chamber Treatment