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A Chlorinated RIE Process with High Si3N4:SiO2 Etch Selectivity Disclosure Number: IPCOM000040960D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-02

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Arroyo, MA Stanasolovich, D [+details]


The process described below allows for high etch selectivity of silicon nitride with the respect to silicon dioxide. This is important in the definition of nitride spacers and other processing steps. Step 1 - Chamber Treatment