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Forming Fine Copper Lines by Dry Reaction and Wet Development

IP.com Disclosure Number: IPCOM000040985D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-02

Publishing Venue

IBM

Related People

Authors:
Haring, RA Robinson, B Yeh, JT [+details]

Abstract

A process for forming copper wirings on various surfaces comprises layering a film of copper on a substrate. A layer of photoresist is patterned on top of the copper film, exposing the sample to chlorine gas or a plasma (RF or microwave) containing chlorine ammonium radicals, washing the exposed sample with ammonium hydroxide, and stripping the photoresist. The provided dry reaction-wet development process provides well defined fine lines as compared to wet etching processes.