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The endpoint of a chromium etching process is detected by monitoring the intensity of the luminescence which is in the area of the sample being etched.
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Chromium Plasma Etch Process with Endpoint Detection
The endpoint of a chromium etching process is detected by monitoring the
intensity of the luminescence which is in the area of the sample being etched.
Samples coated with thin films of chromium have been etched in an rf plasma
using oxygen and tetrafluoromethane as etching gases. Sample structure is
shown in Fig. 1. The plasma etch system used was a conventional diode type
and is shown schematically in Fig. 2. When chromium is present and etching, a
localized luminescence is observed in the gas in the area above and around the
sample. When all of the Cr has been etched and the etching products exhausted
from the chamber, the luminescence ceases. Optical emission spectra show that
the luminescence is a broadband, continuum in the visible region. By
continuously monitoring the intensity of the continuum, or some wavelength
contained within the continuum, the endpoint of the etch process can be