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This article describes a method for enhancing the lift-off of evaporated metal by reducing processing time and eliminating the problem of residual metal and photoresist material.
English (United States)
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Enhanced Lift-Off Structure for Multi-Layer Resist (mlr)
This article describes a method for enhancing the lift-off of evaporated metal
by reducing processing time and eliminating the problem of residual metal and
In conventional lift-off processes, a lift-off layer such as polysulfone is
applied, followed by one or more imaging layers of photoresist. Additional barrier
layers, such as hexamethyldisilizane or silicon nitride are often included. After
the desired pattern is lithographically defined in the lift-off structure, metal is
deposited as is well-known in the art. After deposition, the lift-off structure is
removed in a suitable solvent, leaving only the desired metal conductors.
It has been found that the addition of a second layer of polysulfone, this
second layer being on top of the photoresist layer, will enhance the lift-off of the
lift-off structure after metal deposition. This results in a faster and more efficient
removal process with a reduced amount of residual metal and photoresist
remaining on a semiconductor wafer.